NAND01GW3B2CN6E electronic components datasheet and price from oemsemi

Part #: NAND01GW3B2CN6E
Part Category: Memory ICs
Manufacturer: STMicroelectronics, Inc.
Description: 128MX8 FLASH 3V PROM, 25000ns, PDSO48
Mfr Package Description 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
REACH Compliant Yes
EU RoHS Compliant Yes
Status Transferred
Access Time-Max 25000 ns
JESD-30 Code R-PDSO-G48
JESD-609 Code e3/e6
Memory Density 1.02E9 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Terminals 48
Number of Words 1.28E8 words
Number of Words Code 128M
Operating Mode ASYNCHRONOUS
Operating Temperature-Min -40 Cel
Operating Temperature-Max 85 Cel
Organization 128MX8
Package Body Material PLASTIC/EPOXY
Package Code TSOP1
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Programming Voltage (V) 3
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Supply Voltage-Nom (Vsup) 3 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Max (Vsup) 3.6 V
Surface Mount YES
Temperature Grade INDUSTRIAL
Terminal Finish TIN/TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.5000 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Length 18.4 mm
Width 12 mm


Get quote for NAND01GW3B2CN6E, click the below link to our web and submit RFQ, also the parts can not find at our web, our salesman will find it and response you in 24 work hours.
http://tinyurl.com/nd9pznq